Recently, Samsung announced the memory of V-NAND with 64 layers, and now it is the turn SK Hynix competitor. The company introduced the fourth generation of memory 3D NAND, focused on high performance together with a reduction in production costs. Memory 3D NAND V4 production SK Hynix will have a capacity of 256 gigabits per chip, TLC technology allows stores three bits in the memory cell. Advantages of the fourth generation is mainly to optimize the production company is managed by a third proportion of yield increase from plate crystals. All this allows us to reduce production costs, as a single wafer can produce more chips.
3D NAND V4 also offers increased performance. SK Hynix indicates increase read and write performance by 40%, but without further details. Furthermore, power consumption is reduced by approximately 15%. The fourth generation of flash memory will be released in the fourth quarter of 2016, simultaneously with the memory V-NAND from Samsung. However, Samsung’s fourth generation differs doubled capacity of 512 gigabits per chip. Of course, it will be interesting to see which of Samsung and SK Hynix will be released into the lead at the lowest price. In any case, the price of SSD with the latest generation of memory will continue to decline. But before the drives in the market will take several months.